IRF3205 MOSFET

QUICK OVERVIEW:-

• Drain to source voltage vds is 100V
• Gate to source voltage is ±20V
• On Resistance Rds(on) of 44mohm at Vgs of 10V
• Power dissipation Pd of 130W at 25°C                                                                             

 Product Description:-

The IRF3205 MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in the TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications.

Note: Image may vary from actual product in terms of Manufacturer/Brand name according to the availability.                                                                                           

 Features:-

• Gate to source voltage is ±20V
• On-Resistance Rds(on) of 8mohm at Vgs of 10V
• Power dissipation (Pd) of 130W at 25°C
• Continuous drain current (Id) of 110A at Vgs 10V and 25°C
• Operating junction temperature range from -55°C to 175°C
• Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.